Analysis and Modeling of Photomask Near-Fields in Sub-wavelength Deep Ultraviolet Lithography with Optical Proximity Corrections
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چکیده
of the Dissertation Analysis and Modeling of Photomask Near-Fields in Sub-wavelength Deep Ultraviolet Lithography with Optical Proximity Corrections
منابع مشابه
Fast evaluation of Photomask Near-Fields in Sub-Wavelength 193nm Lithography
Sub-wavelength lithography places a serious limitation on the conventional ”thin mask” approximation of the field immediately behind the patterned mask. This approximation fails to account for the increasingly important topographical effects of the mask or ”thick mask” effects. This approximation of the photomask near-fields results from the direct application of Kirchhoff Boundary Conditions, ...
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تاریخ انتشار 2004